BL2N65I Description
2 Amps, 600 Volts N-CHANNEL MOSFET.
BL2N65I Key Features
- RDS(on)=3.8Ω@VGS=10V
- Ultra Low gate charge (typical 9.0nC) Lead-free
- Low reverse transfer capacitance (Crss = typical 5.0 pF)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- 55 ~ +150