900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






GME

BL3435 Datasheet Preview

BL3435 Datasheet

P-Channel Power Mosfet

No Preview Available !

Production specification
P-Channel Enhancement Mode Field Effect Transistor BL3435
FEATURES
Electrostatic Sensitive Devices.
VDS (V) =- 20V
ID = -3.5 A(VGS = -4.5V)
RDS(ON) < 70m(VGS = -4.5V)
RDS(ON) < 90m(VGS = -2.5V)
RDS(ON) < 110m(VGS = -1.8V)
RDS(ON) < 130m(VGS = -1.5V)
Pb
Lead-free
APPLICATIONS
P-channel enhancement mode effect transistor.
Switching application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
BL3435
3435
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source voltage
-20
VGSS
ID
IDM
PD
RθJA
Gate -Source voltage
±8
Continuous Drain CurrentA
@ TA = 25
@ TA = 70
Pulsed Drain Current a
Power Dissipation
@ TA = 25
@ TA = 70
Thermal resistance,Junction-to-Ambient
-3.5
-2.7
-25
1.4
0.9
70
TJ, Tstg
Junction and Storage Temperature
-55 to +150
Units
V
V
A
A
W
/W
C302
Rev.A
www.gmesemi.com
1




GME

BL3435 Datasheet Preview

BL3435 Datasheet

P-Channel Power Mosfet

No Preview Available !

Production specification
P-Channel Enhancement Mode Field Effect Transistor BL3435
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-body Leakage
Gate Threshold Voltage
On state drain current
Static drain-Source on-resistance
Forward Transconductance
Drain-Source diode forward
voltage
Maximum Body-Diode Continuous
Current
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
VGS=0V,ID= -250μA
VDS= -20VGS=0V
VDS=0V, VGS=±8V
VDS=VGS, ID= -250μA
IDON) VGS= -4.5V, VDS=-5V
VGS= -4.5V, ID= -3.5A
RDS(ON)
VGS= -2.5V, ID= -3.0A
VGS= -1.8V, ID= -2.0A
VGS= -1.5V, ID= -0.5A
gFS VDS= -5V, ID= -3.5A
VSD IS= -1A,VGS=0V
IS
DYNAMIC CHARACTERISTICSC
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
CISS
COSS
CRSS
Rg
VGS=0V, VDS= -10V,
f=1MHz
VGS=0V, VDS=0V,
f=1MHz
SWITCHING CHARACTERISTICSC
-20 -
-
- - -1
- - ±100
-0.5 -0.65 -1.0
-25 -
-
56 70
- 70 90
- 85 110
100 130
- 15 -
- -0.7 -1.0
- - -1.4
- 560 745
- 80 -
- 70 -
15 23
V
μA
nA
V
A
m
S
V
A
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
tD(ON)
tr
tD(OFF)
tf
Qg
Qgs
Qgd
trr
Qrr
VGS= -4.5V,
VDS= -10V,
RL=3,
RGEN=6
VGS= -4.5V,
VDS= -10V,
ID= -3.5A
IF= -3.5A,
dI/dt=100A/μs
IF= -3.5A,
dI/dt=100A/μs
- 7.2 -
ns
- 36 - ns
- 53 - ns
- 56 - ns
- 8.5 11 nC
- 1.2 - nC
- 2.1 - nC
- 37 49 nS
- 27 - nC
C302
Rev.A
www.gmesemi.com
2


Part Number BL3435
Description P-Channel Power Mosfet
Maker GME
Total Page 5 Pages
PDF Download

BL3435 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 BL3435 P-Channel Power Mosfet
GME





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy