BL3435 Overview
Production specification P-Channel Enhancement Mode Field Effect Transistor BL3435.
BL3435 Key Features
- Electrostatic Sensitive Devices
- VDS (V) =- 20V
- ID = -3.5 A(VGS = -4.5V)
- RDS(ON) < 70mΩ (VGS = -4.5V)
Datasheet Details
| Part number | BL3435 |
|---|---|
| Datasheet | BL3435-GME.pdf |
| File Size | 599.54 KB |
| Manufacturer | Galaxy Microelectronics |
| Description | P-Channel Power Mosfet |
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