BL4N50F Description
4A,500V N-Channel Power Mosfet.
BL4N50F Key Features
- RDS(ON) =2.0Ω@ VGS = 10V
- High Switching Speed
- 100% Avalanche Tested
- 55 to +150
- Part: BL4N50F
- Manufacturer: Galaxy Microelectronics
- Size: 241.73 KB
Related Galaxy Microelectronics Datasheets
| Part Number | Description |
|---|---|
| BL4N50D | N-Channel Enhancement Mode MOSFET |
| BL4N60 | N-Channel Power Mosfet |
| BL4N60D | N-Channel Power Mosfet |
| BL4N60F | N-Channel Power MOSFET |
| BL4N60I | N-Channel Power Mosfet |