* NMOS
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* RDS(ON) (at VGS = 2.5V)
* RDS(ON) (at VGS = 1.8V) 20V 1.36A < 375mΩ < 450mΩ < 800mΩ .

G1NP02ELL General Features
* NMOS
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* RDS(ON) (.

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. G1NP02ELL General Features .

G1NP02ELL

G1000LL250

G1000LM250

G1000NC450

G1000NL450

G1000QC250

G1000QC400

G1000QC450

G1002

G1003A

G1003B

G1005

G1006A