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G900P15M Datasheet, GOFORD

G900P15M Datasheet, GOFORD

G900P15M

datasheet Download (Size : 857.78KB)

G900P15M Datasheet

G900P15M mosfet equivalent, p-channel enhancement mode power mosfet.

G900P15M

datasheet Download (Size : 857.78KB)

G900P15M Datasheet

Features and benefits

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -150V -60A < 80mΩ Schematic diagram Application l Power switch l DC/DC co.

Application

General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -150V .

Description

The G900P15M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Comp.

Image gallery

G900P15M Page 1 G900P15M Page 2 G900P15M Page 3

TAGS

G900P15M
P-Channel
Enhancement
Mode
Power
MOSFET
GOFORD

Manufacturer


GOFORD

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