GT110N06 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* 100% Avalanche Tested
* RoHS Compliant
60V 14A < 11mΩ < 14mΩ
App.
General Features
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* 1.
The GT110N06S uses advanced trench technology to
provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS =.
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