GE60T03 mosfet equivalent, n-channel enhancement mode power mosfet.
*Low Gate Charge *Simple Drive Requirement *Fast Switching Speed *RoHS Compliant
Package Dimensions
REF.
A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 .
and suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge *Simple Drive Requirement *.
The GE60T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage a.
Image gallery
TAGS