Datasheet Details
| Part number | GI09N20 |
|---|---|
| Manufacturer | GTM |
| File Size | 255.89 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 GI09N20 Datasheet
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General Description
The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications.
Key Features
- Simple Drive Requirement.
- Lower On-resistance.
- Fast Switching Characteristic Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VG.