*Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80.

Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Package Dimensions TO-251 RE.

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.6A The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO.

GI01-04

GI01-05

GI01-06

GI01-64

GI01-64D

GI01-65

GI01-66

GI01-74

GI01-74D

GI01-75

GI01-76

GI01L60

GI01N60