GI09N20 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

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Datasheet Details

Part number	GI09N20
Manufacturer	GTM
File Size	255.89 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GI09N20_GTM.pdf

GI09N20 Product details

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.6A The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The through-hole version (TO-251) is available for low-profile applications.

Features

Simple Drive Requirement.
Lower On-resistance.
Fast Switching Characteristic Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VG.

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Published: Sep 27, 2007 |