| Part number | GI01L60 |
|---|---|
| Datasheet | GI01L60_GTM.pdf |
| File Size | 306.50 KB |
| Manufacturer | GTM |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Features N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12 1A The GI01L60 (through-hole version) is available for low-profile applications and suited for AC/DC converters. Repetitive Avalanche Rated Simple Drive Requirement Fast Switching Speed RoHS pliant Package Dimensions TO-251 REF. A B C D E F Millimeter Min.
| Part Number | Description |
|---|---|
| GI01N60 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI03N70 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI08P10 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI09N20 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
