GI01L60 Datasheet | GTM

Description Features N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12 1A The GI01L60 (through-hole version) is available for low-profile applications and suited for AC/DC converters. - Repetitive Avalanche Rated - Simple Drive Requirement - Fast Switching Speed - Ro HS pliant Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Ratings 600 30 1 0.8 3 29 0.232 0.5 1 0.5 -55 ~ +150 Unit V V A A A W W/ m J A m J Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range EAS IAR EAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 4.3 110 Unit /W /W Page: 1/4 ISSUED DATE :2005/08/19 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 600 2.0 Typ. 0.8 0.8 4.0 1.0 1.1 6.6 5.0 11.7 9.2 170 30.7 5.1 Max. 4.0 100 10 100 12 p F ns n C Unit V V/ V S n A u A u A Test Conditions VGS=0, ID=1m A Reference to 25 , ID=1m A VDS=VGS, ID=250u A VDS=10V, ID=0.5A VGS= 30V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss VDS=600V, VGS=0 VDS=480V, VGS=0 VGS=10V, ID=0.5A ID=1A VDS=480V VGS=10V VDD=300V ID=1A VGS=10V RG=3.3 RD=300 VGS=0V VDS=25V...