GI08P10 Datasheet | GTM

Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -100V 200m -8A The GI08P10 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-251 package is universally preferred for all mercial-industrial through hole applications. - Simple Drive Requirement - Lower On-resistance - Fast Switching Characteristic - Ro HS pliant Features Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Ratings -100 ±32 -8 -6 -32 45 0.36 100 -8 -55 ~ +150 Unit V V A A A W W/ m J A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Operating Junction and Storage Temperature Range EAS IAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.8 110 Unit /W /W Page: 1/4 ISSUED DATE :2006/02/21 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. -100 -1.0 Typ. -0.096 8 16 4.4 8.7 9 14 45 40 1590 110 70 8 Max. -3.0 ±100 -1 -25 200 250 25.6 2550 12 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=-250u A Reference to 25 , ID=-1m A VDS=VGS, ID=-250u A VDS=-10V, ID=-6A VGS= ±32V VDS=-100V, VGS=0 VDS=-80V, VGS=0 VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A ID=-6A VDS=-80V VGS=-4.5V VDS=-50V ID=-6A VGS=-10V RG=3.3 RD=6.25 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage...