GI08P10 Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -100V 200m -8A The GI08P10 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-251 package is universally preferred for all mercial-industrial through hole applications. Simple Drive Requirement Lower On-resistance Fast Switching Characteristic RoHS pliant.