• Part: GI01N60
  • Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • Manufacturer: GTM
  • Size: 317.70 KB
Download GI01N60 Datasheet PDF
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Datasheet Summary

Pb Free Plating Product ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 8 1.6A The GI01N60 provide the designer with the best bination of fast switching. The through-hole version (TO-251) is available for low-profile applications and suited for AC/DC converters. - Dynamic dv/dt Rating - Simple Drive Requirement - Repetitive Avalanche Rated - Fast Switching Features Package Dimensions TO-251 REF. .. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50...