GI09N20 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

GTM

Part number	GI09N20
Manufacturer	GTM
File Size	255.89 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	GI09N20 Datasheet
Additional preview pages of the GI09N20 datasheet.

The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The through-hole version (TO-251) is available for low-profile applications.

Simple Drive Requirement.
Lower On-resistance.
Fast Switching Characteristic Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VG.

Other Datasheets by GTM

Published: Sep 27, 2007 |