GI09N20 Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.6A The GI09N20 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications.
GI09N20 Key Features
- Simple Drive Requirement -Lower On-resistance -Fast Switching Characteristic