GI09N20 Datasheet | GTM

Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.6A The GI09N20 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-251) is available for low-profile applications. Features - Simple Drive Requirement - Lower On-resistance - Fast Switching Characteristic Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Ratings 200 ±30 8.6 5.5 36 69 0.55 40 8.6 -55 ~ +150 Unit V V A A A W W/ m J A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Operating Junction and Storage Temperature Range EAS IAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 1.8 110 Unit /W /W Page: 1/4 ISSUED DATE :2005/06/27 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 200 2.0 Typ. 0.24 3.7 23 4 13 12 25 36 16 500 90 40 Max. 4.0 ±100 10 100 380 37 800 p F ns n C Unit V V/ V S n A u A u A m Test Conditions VGS=0, ID=1m A Reference to 25 , ID=1m A VDS=VGS, ID=250u A VDS=10V, ID=5A VGS= ±30V VDS=200V, VGS=0 VDS=160V, VGS=0 VGS=10V, ID=5A ID=8.6A VDS=160V VGS=10V VDD=100V ID=8.6A VGS=10V RG=10 RD=11.6 VGS=0V VDS=25V f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) gfs IGSS...