PNP EPITAXIAL PLANAR T RANSISTOR Description The GI127 is designed for use in general purposes and low speed switching applications. High DC current gain Built-in a da.

High DC current gain Built-in a damper diode at E-C Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. .

The GI127 is designed for use in general purposes and low speed switching applications. High DC current gain Built-in a damper diode at E-C Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2..

GI1202

GI122

GI1001

GI1002

GI1003

GI1004

GI1060

GI1101

GI1102

GI1103

GI1104

GI1182

GI1386