GI127 Overview
The GI127 is designed for use in general purposes and low speed switching applications. High DC current gain Built-in a damper diode at E-C Package Dimensions TO-251 REF. A B C D E F Millimeter Min.
| Part number | GI127 |
|---|---|
| Datasheet | GI127_GTM.pdf |
| File Size | 196.56 KB |
| Manufacturer | GTM |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
|
|
|
The GI127 is designed for use in general purposes and low speed switching applications. High DC current gain Built-in a damper diode at E-C Package Dimensions TO-251 REF. A B C D E F Millimeter Min.
| Part Number | Description |
|---|---|
| GI122 | NPN EPITAXIAL PLANAR TRANSISTOR |
| GI1060 | NPN EPITAXIAL PLANAR TRANSISTOR |
| GI1182 | PNP SILICON EPITAXIAL PLANAR TRANSISTOR |
| GI1386 | PNP EPITAXIAL SILICON TRANSISTOR |
| GI15N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI15T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI1952 | PNP HIGH SPEED SWITCHING TRANSISTOR |