| Part number | GI1952 |
|---|---|
| Datasheet | GI1952_GTM.pdf |
| File Size | 409.98 KB |
| Manufacturer | GTM |
| Description | PNP HIGH SPEED SWITCHING TRANSISTOR |
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Features PNP HIGH SPEED SWITCHING TRANSISTOR The GI1952 is designed for high speed switching applications. Low saturation voltage, typically VCE(sat) =-0.2V at IC/IB=-3A/-0.15A High speed switching, typically tf =0.15 s at IC=-3A Wide SOA plements to GI5103 Package Dimensions TO-251 REF. A B C D E F Millimeter Min.
| Part Number | Description |
|---|---|
| GI1060 | NPN EPITAXIAL PLANAR TRANSISTOR |
| GI1182 | PNP SILICON EPITAXIAL PLANAR TRANSISTOR |
| GI122 | NPN EPITAXIAL PLANAR TRANSISTOR |
| GI127 | NPN EPITAXIAL PLANAR TRANSISTOR |
| GI1386 | PNP EPITAXIAL SILICON TRANSISTOR |
| GI15N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI15T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
