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GTC220E Datasheet Preview

GTC220E Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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ISSUED DATE :2006/09/13
REVISED DATE :
GTC220E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
30m
5A
Description
The GTC220E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
*Surface mount package
Package Dimensions
REF.
A
A1
b
c
D
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current3, VGS@10V
Continuous Drain Current3, VGS@10V
Pulsed Drain Current1,2
Total Power Dissipation
VGS
ID @Ta=25
ID @Ta=70
IDM
PD @Ta=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-a
Millimeter
Min. Max.
- 1.20
0.05
0.15
0.19
0.30
0.09
0.20
2.90
3.10
REF.
E
E1
e
L
S
Ratings
20
±12
5.0
4.0
20
1
0.008
-55 ~ +150
Value
125
Millimeter
Min. Max.
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
0° 8°
Unit
V
V
A
A
A
W
W/
Unit
/W
GTC220E
Page: 1/4




GTM

GTC220E Datasheet Preview

GTC220E Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

ISSUED DATE :2006/09/13
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.1
- V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
0.5
-
-
V VDS=VGS, ID=250uA
Forward Transconductance
gfs
- 9.7 -
S VDS=10V, ID=4.6A
Gate-Source Leakage Current
IGSS - - ±10 uA VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=20V, VGS=0
- 25 uA VDS=20V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 30 m VGS=4.5V, ID=5A
- 40
VGS=2.5V, ID=3A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 12.5 -
ID=4.6A
Qgs - 1 - nC VDS=20V
Qgd - 6.5 -
VGS=5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
-5-
-9-
- 26.2 -
- 6.8 -
VDS=10V
ID=1A
Ns VGS=5V
RG=3.3
RD=10
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 355 -
- 190 -
- 85 -
VGS=0V
pF VDS=20V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current(Body Diode)
Continuous Source Current(Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.2
1.25
20
Unit Test Conditions
V IS=1.25, VGS=0V, Tj=25
A VD= VG=0V, VS=1.2V
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t 10sec.
GTC220E
Page: 2/4


Part Number GTC220E
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
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