GTC220E Datasheet | GTM

Description Features Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0° Max. 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID @Ta=25 ID @Ta=70 IDM PD @Ta=25 Tj, Tstg Ratings 20 ±12 5.0 4.0 20 1 0.008 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient Max. Symbol Rthj-a Value 125 Unit /W Page: 1/4 ISSUED DATE :2006/09/13 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 20 0.5 Typ. 0.1 9.7 12.5 1 6.5 5 9 26.2 6.8 355 190 85 Max. ±10 1 25 30 40 p F Ns n C Unit V V/ V S u A u A u A m Test Conditions VGS=0, ID=250u A Reference to 25 , ID=1m A VDS=VGS, ID=250u A VDS=10V, ID=4.6A VGS= ±12V VDS=20V, VGS=0 VDS=20V, VGS=0 VGS=4.5V, ID=5A VGS=2.5V, ID=3A ID=4.6A VDS=20V VGS=5V VDS=10V ID=1A VGS=5V RG=3.3 RD=10 VGS=0V VDS=20V f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance Total Gate Charge RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain...