GS-065-008-6-L Datasheet

Features and Benefits

• 700 V enhancement mode power transistor
• 850 V transient drain-to-source voltage
• Bottom-cooled, small 5x6 mm PDFN package
• RDS(on) = 165 mΩ
• IDSmax,DC= 8.8 A / IDSmax,Pulse = 14.8 A
• Ultra-low FOM
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
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