GS-065-030-2-L Datasheet

Features and Benefits

• 650 V enhancement mode power transistor
• 850 V transient drain-to-source voltage
• Bottom-cooled, 8x8 mm PDFN package
• RDS(on) = 50 mΩ
• IDS,max = 30 A / IDSmax,Pulse = 60 A
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• High switching frequency (.