GS-065-030-2-L
GS-065-030-2-L is 650V E-mode GaN transistor manufactured by GaN Systems.
GS-065-030-2-L 650 V E-mode GaN transistor
Features
- 650 V enhancement mode power transistor
- 850 V transient drain-to-source voltage
- Bottom-cooled, 8x8 mm PDFN package
- RDS(on) = 50 mΩ
- IDS,max = 30 A / IDSmax,Pulse = 60 A
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- High switching frequency (> 1 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Source Sense (SS) pin for optimized gate drive
- RoHS 3 (6+4) pliant
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Applications
- Bridgeless Totem Pole PFC
- Consumer, Industrial and Datacenter High
Density Power Supply
- High Power...
