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GS-065-030-2-L Datasheet, GaN Systems

GS-065-030-2-L transistor equivalent, 650v e-mode gan transistor.

GS-065-030-2-L Avg. rating / M : 1.0 rating-14

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GS-065-030-2-L Datasheet

Features and benefits


* 650 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled, 8x8 mm PDFN package
* RDS(on) = 50 mΩ
* IDS,max =.

Application


* Bridgeless Totem Pole PFC
* Consumer, Industrial and Datacenter High Density Power Supply
* High Power Ada.

Image gallery

GS-065-030-2-L Page 1 GS-065-030-2-L Page 2 GS-065-030-2-L Page 3

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