• Part: GS-065-030-6-LL
  • Description: 700V E-mode GaN transistor
  • Category: Transistor
  • Manufacturer: GaN Systems
  • Size: 774.44 KB
Download GS-065-030-6-LL Datasheet PDF
GaN Systems
GS-065-030-6-LL
GS-065-030-6-LL is 700V E-mode GaN transistor manufactured by GaN Systems.
Features - 700 V enhancement mode power transistor - 850 V transient drain-to-source voltage - Bottom-cooled, TOLL package - RDS(on) = 40 mΩ - IDS,max = 40 A / IDSmax,Pulse = 67 A - Simple gate drive requirements (0 V to 6 V) - Transient tolerant gate drive (-20 V / +10 V) - High switching frequency (> 1 MHz) - Fast and controllable fall and rise times - Reverse conduction capability - Zero reverse recovery loss - Source Sense (SS) pin for optimized gate drive - RoHS 3 (6+4) pliant GS-065-030-6-LL 700 V E-mode GaN transistor Package Outline top view Circuit Symbol Applications - Bridgeless Totem Pole PFC - Industrial and Datacenter High Density Power Supply - Appliance and...