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GS-065-030-6-LL Datasheet - GaN Systems

700V E-mode GaN transistor

GS-065-030-6-LL Features

* 700 V enhancement mode power transistor

* 850 V transient drain-to-source voltage

* Bottom-cooled, TOLL package

* RDS(on) = 40 mΩ

* IDS,max = 40 A / IDSmax,Pulse = 67 A

* Simple gate drive requirements (0 V to 6 V)

* Transient tolerant gate d

GS-065-030-6-LL General Description

The GS-065-030-6-LL is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-.

GS-065-030-6-LL Datasheet (774.44 KB)

Preview of GS-065-030-6-LL PDF

Datasheet Details

Part number:

GS-065-030-6-LL

Manufacturer:

GaN Systems

File Size:

774.44 KB

Description:

700v e-mode gan transistor.

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GS-065-030-6-LL 700V E-mode GaN transistor GaN Systems

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