GS-065-030-6-LL Datasheet

Features and Benefits

• 700 V enhancement mode power transistor
• 850 V transient drain-to-source voltage
• Bottom-cooled, TOLL package
• RDS(on) = 40 mΩ
• IDS,max = 40 A / IDSmax,Pulse = 67 A
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• High switching frequency (> 1 MHz.