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GS66504B - 650V enhancement mode GaN transistor

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GaN Systems

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GS66504B 650V enhancement mode GaN transistor by GaN Systems - Datasheet Preview — Datasheet preview – GS66504B

Datasheet Details

Part number	GS66504B
Manufacturer	GaN Systems
File Size	851.38 KB
Description	650V enhancement mode GaN transistor
Datasheet	GS66504B Datasheet
Note	This datasheet PDF includes multiple part numbers: GS66504B, GS66502B. Please refer to the document for exact specifications by model.
Additional preview pages of the GS66504B datasheet.

Product details

Description

The GS66504B is an enhancement mode GaN-onsilicon power transistor.

Features

650 V enhancement mode power transistor.
Bottom-side cooled configuration.
RDS(on) = 100 mΩ.
IDS(max) = 15 A.
Ultra-low FOM die.
Low inductance GaNPX® package.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
Very high switching frequency (> 10 MHz).
Fast and controllable fall and rise times.
Reverse current capability.
Zero reverse recovery loss.

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Published: Apr 14, 2017 |