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GS66502B Datasheet 650V enhancement mode GaN transistor

Manufacturer: GaN Systems

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Datasheet Details

Part number GS66502B
Manufacturer GaN Systems
File Size 851.38 KB
Description 650V enhancement mode GaN transistor
Download Download datasheet GS66502B Download (PDF)

General Description

The GS66502B is an enhancement mode GaN-onsilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Overview

GS66502B Bottom-side cooled 650 V E-mode GaN transistor Datasheet.

Key Features

  • 650 V enhancement mode power transistor.
  • Bottom-side cooled configuration.
  • RDS(on) = 200 mΩ.
  • IDS(max) = 7.5 A.
  • Ultra-low FOM die.
  • Low inductance GaNPX® package.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency (> 10 MHz).
  • Fast and controllable fall and rise times.
  • Reverse current capability.
  • Zero reverse recovery los.

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