GS66504B Datasheet 650V enhancement mode GaN transistor

Manufacturer: GaN Systems

Download the GS66504B datasheet PDF. This datasheet also includes the GS66502B variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

GS66504B 650v enhancement mode gan transistor by GaN Systems - Datasheet Preview — Note: The manufacturer provides a single datasheet file (GS66502B-GaNSystems.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	GS66504B
Manufacturer	GaN Systems
File Size	851.38 KB
Description	650V enhancement mode GaN transistor
Download	GS66504B Download (PDF)

General Description

The GS66504B is an enhancement mode GaN-onsilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Overview

GS66504B Bottom-side cooled 650 V E-mode GaN transistor Datasheet.

Key Features

650 V enhancement mode power transistor.
Bottom-side cooled configuration.
RDS(on) = 100 mΩ.
IDS(max) = 15 A.
Ultra-low FOM die.
Low inductance GaNPX® package.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
Very high switching frequency (> 10 MHz).
Fast and controllable fall and rise times.
Reverse current capability.
Zero reverse recovery loss.

More Datasheets from GaN Systems

Part Number	Description
GS66502B	650V enhancement mode GaN transistor
GS66506T	Top cooled 650V enhancement mode GaN transistor
GS66508B	Bottom-side cooled 650V E-mode GaN transistor
GS66508P	Bottom-side cooled 650V E-mode GaN transistor
GS66508T	Top cooled 650V enhancement mode GaN transistor
GS66516B	Bottom-side cooled 650V E-mode GaN transistor
GS66516T	Top cooled 650V enhancement mode GaN transistor
GS61004B	100V enhancement mode GaN transistor
GS61008P	100V enhancement mode GaN transistor
GS61008T	Top-side cooled 100V E-mode GaN transistor