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GS66504B - 650V enhancement mode GaN transistor

Download the GS66504B datasheet PDF (GS66502B included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 650v enhancement mode gan transistor.

Description

The GS66504B is an enhancement mode GaN-onsilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Features

  • 650 V enhancement mode power transistor.
  • Bottom-side cooled configuration.
  • RDS(on) = 100 mΩ.
  • IDS(max) = 15 A.
  • Ultra-low FOM die.
  • Low inductance GaNPX® package.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency (> 10 MHz).
  • Fast and controllable fall and rise times.
  • Reverse current capability.
  • Zero reverse recovery loss.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GS66502B-GaNSystems.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GS66504B
Manufacturer GaN Systems
File Size 851.38 KB
Description 650V enhancement mode GaN transistor
Datasheet download datasheet GS66504B Datasheet

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Full PDF Text Transcription

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GS66504B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 100 mΩ • IDS(max) = 15 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching frequency (> 10 MHz) • Fast and controllable fall and rise times • Reverse current capability • Zero reverse recovery loss • Small 5.0 x 6.
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