GaN Systems GS66506T
The GS66506T is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66506T is a top-side cooled transistor that offers very low junction-tocase thermal resistance for demanding high power applications.| Part No. | GS66506T |
|---|---|
| Datasheet | GS66506T Download |
| Manufacturer |  GaN Systems |
| Description | Top cooled 650V enhancement mode GaN transistor |
| Buy | Stock & Price |
FEATURES
● 650 V enhancement mode power transistor● Top-side cooled configuration
● RDS(on) = 67 mΩ
● IDS(max) = 22.5 A
● Ultra-low FOM die
● Low inductance GaNPX® package
● Simple gate drive requirements (0 V to 6 V)
● Transient tolerant gate drive (-20 / +10 V)
● Very high switching frequency (> 10 MHz)
● Fast and controllable fall and rise times
● Reverse current capability
● Zero reverse recovery loss
● Small 5.6 x 4.5 mm2 PCB footprint
● Dual gate pads for optimal board layout
● RoHS3 (6 + 4) compliant Package Outline Circuit Symbol The thermal pad is internally connected to Source (S pin 3) and substrate
APPLICATIONS
● AC-DC Converters● DC-DC converters
● Uninterruptable Power Supplies
● Industrial Motor Drives
● Appliance Motor Drives
● Fast Battery Charging
● Class D Audio amplifiers
● Wireless Power Transfer
DESCRIPTION
GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield.
