GS66506T
GS66506T is Top cooled 650V enhancement mode GaN transistor manufactured by GaN Systems.
GS66506T Top-side cooled 650 V E-mode GaN transistor
Features
- 650 V enhancement mode power transistor
- Top-side cooled configuration
- RDS(on) = 67 mΩ
- IDS(max) = 22.5 A
- Ultra-low FOM die
- Low inductance GaNPX® package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 5.6 x 4.5 mm2 PCB footprint
- Dual gate pads for optimal board layout
- RoHS3 (6 + 4) pliant
Package Outline
Circuit Symbol
The thermal pad is internally connected to Source (S pin 3) and substrate
Applications...
