GS66506T
Overview
The GS66506T is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency.
- 650 V enhancement mode power transistor
- Top-side cooled configuration
- RDS(on) = 67 mΩ
- IDS(max) = 22.5 A
- Ultra-low FOM die
- Low inductance GaNPX® package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
