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GS66506T Datasheet Top cooled 650V enhancement mode GaN transistor

Manufacturer: GaN Systems

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Datasheet Details

Part number GS66506T
Manufacturer GaN Systems
File Size 888.39 KB
Description Top cooled 650V enhancement mode GaN transistor
Download Download datasheet GS66506T Download (PDF)

General Description

The GS66506T is an enhancement mode GaN-onsilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Overview

GS66506T Top-side cooled 650 V E-mode GaN transistor Datasheet.

Key Features

  • 650 V enhancement mode power transistor.
  • Top-side cooled configuration.
  • RDS(on) = 67 mΩ.
  • IDS(max) = 22.5 A.
  • Ultra-low FOM die.
  • Low inductance GaNPX® package.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 / +10 V).
  • Very high switching frequency (> 10 MHz).
  • Fast and controllable fall and rise times.
  • Reverse current capability.
  • Zero reverse recovery loss.

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