GS66508B
GS66508B is Bottom-side cooled 650V E-mode GaN transistor manufactured by GaN Systems.
GS66508B Bottom-side cooled 650 V E-mode GaN transistor
Features
- 650 V enhancement mode power transistor
- Bottom-side cooled configuration
- RDS(on) = 50 mΩ
- IDS(max) = 30 A
- Ultra-low FOM die
- Low inductance GaNPX® package
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency (> 10 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Small 7.0 x 8.4 mm2 PCB footprint
- Source Sense (SS) pin for optimized gate drive
- RoHS 3 (6+4) pliant
Package Outline Circuit Symbol
Applications
- AC-DC Converters
- DC-DC Converters
- Bridgeless Totem...
