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GS66508B - Bottom-side cooled 650V E-mode GaN transistor

Description

The GS66508B is an enhancement mode GaN-onsilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Features

  • 650 V enhancement mode power transistor.
  • Bottom-side cooled configuration.
  • RDS(on) = 50 mΩ.
  • IDS(max) = 30 A.
  • Ultra-low FOM die.
  • Low inductance GaNPX® package.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency (> 10 MHz).
  • Fast and controllable fall and rise times.
  • Reverse conduction capability.
  • Zero reverse recovery lo.

📥 Download Datasheet

Datasheet Details

Part number GS66508B
Manufacturer GaN Systems
File Size 918.44 KB
Description Bottom-side cooled 650V E-mode GaN transistor
Datasheet download datasheet GS66508B Datasheet

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Full PDF Text Transcription

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GS66508B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 50 mΩ • IDS(max) = 30 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching frequency (> 10 MHz) • Fast and controllable fall and rise times • Reverse conduction capability • Zero reverse recovery loss • Small 7.0 x 8.
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