GaN Systems GS66508B
The GS66508B is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66508B is a bottom-side cooled transistor that offers very low junction-tocase thermal resistance for demanding high power applications.| Part No. | GS66508B |
|---|---|
| Datasheet | GS66508B Download |
| Manufacturer |  GaN Systems |
| Description | Bottom-side cooled 650V E-mode GaN transistor |
| Buy | Stock & Price |
FEATURES
● 650 V enhancement mode power transistor● Bottom-side cooled configuration
● RDS(on) = 50 mΩ
● IDS(max) = 30 A
● Ultra-low FOM die
● Low inductance GaNPX® package
● Simple gate drive requirements (0 V to 6 V)
● Transient tolerant gate drive (-20 V / +10 V)
● Very high switching frequency (> 10 MHz)
● Fast and controllable fall and rise times
● Reverse conduction capability
● Zero reverse recovery loss
● Small 7.0 x 8.4 mm2 PCB footprint
● Source Sense (SS) pin for optimized gate drive
● RoHS 3 (6+4) compliant Package Outline Circuit Symbol
APPLICATIONS
● AC-DC Converters● DC-DC Converters
● Bridgeless Totem Pole PFC
● Inverters
● Energy Storage Systems
● On Board Battery Chargers
● Uninterruptable Power Supplies
● Solar Energy
● Industrial Motor Drives
● Appliances
● Laser Drivers
● Wireless Power Transfer
DESCRIPTION
GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield.
