GaN Systems GS66508P
The GS66508P is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66508P is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications.| Part No. | GS66508P |
|---|---|
| Datasheet | GS66508P Download |
| Manufacturer |  GaN Systems |
| Description | Bottom-side cooled 650V E-mode GaN transistor |
| Buy | Stock & Price |
FEATURES
● 650 V enhancement mode power switch● Bottom-side cooled configuration
● RDS(on) = 50 mΩ
● IDS(max) = 30 A
● Ultra-low FOM Island Technology® die
● Low inductance GaNPX® package
● Easy gate drive requirements (0 V to 6 V)
● Transient tolerant gate drive (-20 V / +10 V)
● Very high switching frequency (> 100 MHz)
● Fast and controllable fall and rise times
● Reverse current capability
● Zero reverse recovery loss
● Small 10.0 x 8.7 mm2 PCB footprint
● Source Sense (SS) pin for optimized gate drive
● RoHS 6 compliant Package Outline Circuit Symbol The thermal pad must be connected to Source, S (pad 4), for best performance
APPLICATIONS
● High efficiency power conversion● High density power conversion
● AC-DC Converters
● Bridgeless Totem Pole PFC
● ZVS Phase Shifted Full Bridge
● Half Bridge topologies
● Synchronous Buck or Boost
● Uninterruptable Power Supplies
● Industrial Motor Drives
● Single and 3Φ inverter legs
● Solar and Wind Power
● Fast Battery Charging
● Class D Au...
