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GS66508P - Bottom-side cooled 650V E-mode GaN transistor

Description

The GS66508P is an enhancement mode GaN-onsilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield.

Features

  • 650 V enhancement mode power switch.
  • Bottom-side cooled configuration.
  • RDS(on) = 50 mΩ.
  • IDS(max) = 30 A.
  • Ultra-low FOM Island Technology® die.
  • Low inductance GaNPX® package.
  • Easy gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • Very high switching frequency (> 100 MHz).
  • Fast and controllable fall and rise times.
  • Reverse current capability.
  • Zero reverse.

📥 Download Datasheet

Datasheet Details

Part number GS66508P
Manufacturer GaN Systems
File Size 1.02 MB
Description Bottom-side cooled 650V E-mode GaN transistor
Datasheet download datasheet GS66508P Datasheet

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Full PDF Text Transcription

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GS66508P Bottom-side cooled 650 V E-mode GaN transistor not recommended for new designs- see GS66508B Features • 650 V enhancement mode power switch • Bottom-side cooled configuration • RDS(on) = 50 mΩ • IDS(max) = 30 A • Ultra-low FOM Island Technology® die • Low inductance GaNPX® package • Easy gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching frequency (> 100 MHz) • Fast and controllable fall and rise times • Reverse current capability • Zero reverse recovery loss • Small 10.0 x 8.
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