GS66508P
GS66508P is Bottom-side cooled 650V E-mode GaN transistor manufactured by GaN Systems.
GS66508P Bottom-side cooled 650 V E-mode GaN transistor not remended for new designs- see GS66508B
Features
- 650 V enhancement mode power switch
- Bottom-side cooled configuration
- RDS(on) = 50 mΩ
- IDS(max) = 30 A
- Ultra-low FOM Island Technology® die
- Low inductance GaNPX® package
- Easy gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- Very high switching frequency (> 100 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recovery loss
- Small 10.0 x 8.7 mm2 PCB footprint
- Source Sense (SS) pin for optimized gate drive
- RoHS 6 pliant
Package Outline Circuit Symbol
The thermal pad must be...
