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GS66508B - Bottom-side cooled 650V E-mode GaN transistor

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GaN Systems

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GS66508B Bottom-side cooled 650V E-mode GaN transistor by GaN Systems - Datasheet Preview — Datasheet preview – GS66508B

Datasheet Details

Part number	GS66508B
Manufacturer	GaN Systems
File Size	918.44 KB
Description	Bottom-side cooled 650V E-mode GaN transistor
Datasheet	GS66508B Datasheet
Additional preview pages of the GS66508B datasheet.

Product details

Description

The GS66508B is an enhancement mode GaN-onsilicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging.

Features

650 V enhancement mode power transistor.
Bottom-side cooled configuration.
RDS(on) = 50 mΩ.
IDS(max) = 30 A.
Ultra-low FOM die.
Low inductance GaNPX® package.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
Very high switching frequency (> 10 MHz).
Fast and controllable fall and rise times.
Reverse conduction capability.
Zero reverse recovery lo.

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Published: Apr 13, 2020 |