GS66508B Datasheet | GaN Systems

Features - 650 V enhancement mode power transistor - Bottom-side cooled configuration - RDS(on) = 50 mΩ - IDS(max) = 30 A - Ultra-low FOM die - Low inductance Ga NPX® package - Simple gate drive requirements (0 V to 6 V) - Transient tolerant gate drive (-20 V / +10 V) - Very high switching frequency (> 10 MHz) - Fast and controllable fall and rise times - Reverse conduction capability - Zero reverse recovery loss - Small 7.0 x 8.4 mm2 PCB footprint - Source Sense (SS) pin for optimized gate drive - Ro HS 3 (6+4) pliant Package Outline Circuit Symbol Applications - AC-DC Converters - DC-DC Converters - Bridgeless Totem Pole PFC - Inverters - Energy Storage Systems - On Board Battery Chargers - Uninterruptable Power Supplies - Solar Energy - Industrial Motor Drives - Appliances - Laser Drivers - Wireless Power Transfer Description The GS66508B is an enhancement mode Ga N-onsilicon power transistor. The properties of Ga N allow for high current, high voltage breakdown and high switching frequency. Ga N Systems innovates with industry leading advancements such as patented Island Technology® and Ga NPX® packaging. Island Technology® cell layout realizes high-current die and high yield. Ga NPX® packaging enables low inductance & low thermal resistance in a small package. The GS66508B is a bottom-side cooled transistor that offers very low junction-tocase thermal resistance for demanding high power applications. These features bine to provide very high efficiency power switching. Rev 200402 © 2009-2020 Ga N Systems Inc. Submit datasheet feedback GS66508B Bottom-side cooled 650 V E-mode Ga N transistor Absolute Maximum Ratings (Tcase = 25 °C except as noted) Parameter Symbol...