GS66508P transistor equivalent, bottom-side cooled 650v e-mode gan transistor.
* 650 V enhancement mode power switch
* Bottom-side cooled configuration
* RDS(on) = 50 mΩ
* IDS(max) = 30 A
* Ultra-low FOM Island Technology® die
* High efficiency power conversion
* High density power conversion
* AC-DC Converters
* Bridgeless Totem.
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