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GS66516B - Bottom-side cooled 650V E-mode GaN transistor

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GaN Systems

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GS66516B Bottom-side cooled 650V E-mode GaN transistor by GaN Systems - Datasheet Preview — Datasheet preview – GS66516B

Datasheet Details

Part number	GS66516B
Manufacturer	GaN Systems
File Size	1.03 MB
Description	Bottom-side cooled 650V E-mode GaN transistor
Datasheet	GS66516B Datasheet
Additional preview pages of the GS66516B datasheet.

Product details

Description

The GS66516B is an enhancement mode GaN on silicon power transistor.

Features

650 V enhancement mode power transistor.
Bottom-side cooled configuration.
RDS(on) = 25 mΩ.
IDS(max) = 60 A.
Ultra-low FOM die.
Low inductance GaNPX® package.
Simple drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
Very high switching frequency (> 10 MHz).
Fast and controllable fall and rise times.
Reverse current capability.
Zero reverse recovery loss.

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Published: Jun 17, 2024 |