File Size : 1.03MB ·
7 hits
• 650 V enhancement mode power transistor
• Bottom-side cooled configuration
• RDS(on) = 25 mΩ
• IDS(max) = 60 A
• Ultra-low FOM die
• Low inductance GaNPX® package
• Simple drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• Very high switching frequency (> 10 MHz)
• F.
