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1N1184 - Silicon Standard Recovery Diode

Download the 1N1184 datasheet PDF. This datasheet also covers the 1N1183 variant, as both devices belong to the same silicon standard recovery diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types from 50 to 300 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1183 thru 1N1187R VRRM = 50 V - 300 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N1183-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N1184
Manufacturer GeneSiC
File Size 697.84 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet 1N1184 Datasheet

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Other Datasheets by GeneSiC

Part Number Description
1N1184A Silicon Standard Recovery Diode
1N1184AR Silicon Standard Recovery Diode
1N1184R Silicon Standard Recovery Diode
1N1183 Silicon Standard Recovery Diode
1N1183A Silicon Standard Recovery Diode

Full PDF Text Transcription

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 to 300 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1183 thru 1N1187R VRRM = 50 V - 300 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = 25 °C, tp = 8.
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