GF4412 Description
GF4412 N-Channel Enhancement-Mode MOSFET H C N T E TRE NF E G SO-8 0.197 (5.00) 0.189 (4.80) VDS 30V RDS(ON) 28mΩ ID 7A ® .. (1.27) Mounting Pad Layout Case: SO-8 molded plastic body Terminals:.
GF4412 Key Features
- Advanced Trench Process Technology
- High Density Cell Design for Ultra Low On-Resistance
- Specially Designed for Low Voltage DC/DC Converters
- Fast Switching for High Efficiency
- 20 29 16
- Zero Gate Voltage Drain Current On-State Drain Current(1) Drain-Source On-State Resistance(1) Forward Transconductance(1
- 12 10 37 14
- pF ns nC