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General Semiconductor

GFD25N03 Datasheet Preview

GFD25N03 Datasheet

N-Channel Enhancement Mode MOSFET

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GFD25N03
N-Channel Enhancement-Mode MOSFET
TRENCHET Product®
GENF NewTO-252 (DPAK)
VDS 30V RDS(ON) 16.5mID 38A
D
G
0.265 (6.73)
0.255 (6.48)
0.214 (5.44)
www.DataSheet4U.co0m.206D(5.23)
0.094 (2.39)
0.087 (2.21)
0.050 (1.27)
0.035 (0.89)
0.245 (6.22)
0.235 (5.97)
GS
0.060 (1.52)
0.045 (1.14)
0.023 (0.58)
0.018 (0.46)
0.410 (10.41)
0.380 (9.65)
0.170 (4.32) min.
0.197 (5.00)
0.177 (4.49)
S
0.190
(4.826)
0.165
(4.191)
0.100
(2.54)
0.035 (0.89)
0.028 (0.71)
0.204 (5.18)
0.156 (3.96)
0.040 (1.02)
0.025 (0.64)
0.023 (0.58)
0.018 (0.46)
0.045 (1.14)
0.035 (0.89)
0.020 (0.51)
min.
0.009 (0.23)
0.001 (0.03)
Dimensions in inches
and (millimeters)
0.118
(3.0)
0.243
(6.172)
0.063
(1.6)
Mounting Pad Layout
Mechanical Data
Case: JEDEC TO-252 molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Weight: 0.011oz., 0.4g
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Low Voltage DC/DC Converters
Fast Switching for High Efficiency
Low Gate Charge
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
VGS ±20
Continuous Drain Current
TJ = 150°C
Pulsed Drain Current(1)
TC = 25°C
TC = 70°C
ID
IDM
38
30
80
Power Dissipation
TJ = 150°C
TC = 25°C
TC = 70°C
TA = 25°C(2)
PD
38
24
2.5
Operating Junction and Storage Temperature Range
TJ, Tstg
55 to 150
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(2)
RθJC
RθJA
3.3
50
Notes: (1) Pulse width limited by maximum junction temperature
(2) Surface mounted on a 1in2 2 oz.. Cu PCB (FR-4 material)
Unit
V
A
W
°C
°C/W
°C/W
9/17/01




General Semiconductor

GFD25N03 Datasheet Preview

GFD25N03 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

GFD25N03
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA
Gate Threshold Voltage
www.DataSheeGt4aUt.ec-oBmody Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250µA
VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current
On-State Drain Current(1)
IDSS
ID(on)
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VDS 5V, VGS = 10V
Drain-Source On-State Resistance(1)
Forward Transconductance(1)
RDS(on)
gfs
VGS = 10V, ID = 19A
VGS = 4.5V, ID = 15A
VDS = 5V, ID = 19A
Dynamic
Total Gate Charge
VDS = 15V, VGS = 5V,ID = 19A
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Source-Drain Diode
Diode Forward Voltage(1)
VSD
Continuous Source Current (Diode Conduction)
IS
Notes: (1) Pulse test; pulse width 300 µs, duty cycle 2%
VDD
VDS = 15V, ID = 19A
VGS = 10V
VDD = 15V, ID = 1A
VGEN = 10V, RG = 6
VDS = 15V, VGS = 0V
f = 1.0MHZ
IS = 19A, VGS = 0V
Min
30
0.8
80
ton
Typ
12.5
19
25
11
22
3.4
3.4
10
14
38
6
1173
199
112
0.9
Max Unit
2.5
± 100
1
10
16.5
25
V
V
nA
µA
A
m
S
14
28 nC
18
25
ns
60
10
pF
1.2 V
30 A
toff
Switching
Test Circuit
VIN RD
D
VOUT
Switching
Waveforms
td(on)
tr td(off)
90%
tf
90 %
VGEN
RG
G
S
DUT
Output, VOUT
Input, VIN 10%
10%
50%
10%
INVERTED
90%
50%
PULSE WIDTH


Part Number GFD25N03
Description N-Channel Enhancement Mode MOSFET
Maker General Semiconductor
Total Page 4 Pages
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