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GFD2206 - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

  • Advanced Trench Process Technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Rugged-Avalanche Energy Rated.
  • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS =10V Pulsed Drain Current (1) Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current (1) (1) (2) C = 25°C unless otherwise noted) Symbol VDS VGS TC = 25°C TC.

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Datasheet Details

Part number GFD2206
Manufacturer General Semiconductor
File Size 117.37 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet GFD2206 Datasheet
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Full PDF Text Transcription

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GFD2206 N-Channel Enhancement-Mode MOSFET H C N T E TRE ENF VDS 60V RDS(ON) 22mΩ ID 42A D ® G TO-252 (DPAK) 0.265 (6.73) 0.255 (6.48) 0.214 (5.44) 0.206 (5.23) 0.094 (2.39) 0.087 (2.21) 0.023 (0.58) 0.018 (0.46) 0.050 (1.27) 0.035 (0.89) t c u rod P New G S 0.190 (4.826) www.DataSheet4U.com D 0.170 (4.32) min. 0.245 (6.22) 0.235 (5.97) 0.410 (10.41) 0.380 (9.65) 0.197 (5.00) 0.177 (4.49) 0.165 (4.191) G S 0.060 (1.52) 0.045 (1.14) 0.100 (2.54) 0.035 (0.89) 0.028 (0.71) 0.204 (5.18) 0.156 (3.96) 0.118 (3.0) 0.040 (1.02) 0.025 (0.64) 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) 0.020 (0.51) min. 0.009 (0.23) 0.001 (0.03) Dimensions in inches and (millimeters) 0.243 (6.172) 0.063 (1.
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