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GFD2206 Datasheet N-Channel Enhancement Mode MOSFET

Manufacturer: General Semiconductor (now Vishay)

Overview: GFD2206 N-Channel Enhancement-Mode MOSFET H C N T E TRE ENF VDS 60V RDS(ON) 22mΩ ID 42A D ® G TO-252 (DPAK) 0.265 (6.73) 0.255 (6.48) 0.214 (5.44) 0.206 (5.23) 0.094 (2.39) 0.087 (2.21) 0.023 (0.58) 0.018 (0.46) 0.050 (1.27) 0.035 (0.89) t c u rod P New G S 0.190 (4.826) www.DataSheet4U.com D 0.170 (4.32) min. 0.245 (6.22) 0.235 (5.97) 0.410 (10.41) 0.380 (9.65) 0.197 (5.00) 0.177 (4.49) 0.165 (4.191) G S 0.060 (1.52) 0.045 (1.14) 0.100 (2.54) 0.035 (0.89) 0.028 (0.71) 0.204 (5.18) 0.156 (3.96) 0.118 (3.0) 0.040 (1.02) 0.025 (0.64) 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) 0.020 (0.51) min. 0.009 (0.23) 0.001 (0.03) Dimensions in inches and (millimeters) 0.243 (6.172) 0.063 (1.6) Mounting Pad Layout Mechanical Data Case: JEDEC TO-252 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Weight: 0.011oz., 0.

Key Features

  • Advanced Trench Process Technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Rugged-Avalanche Energy Rated.
  • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS =10V Pulsed Drain Current (1) Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current (1) (1) (2) C = 25°C unless otherwise noted) Symbol VDS VGS TC = 25°C TC.