General Semiconductor GFD2206
N-Channel Enhancement Mode MOSFET
| Part No. | GFD2206 |
|---|---|
| Datasheet | GFD2206 Download |
| Manufacturer |  General Semiconductor |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
MECHANICAL DATA
Case: JEDEC TO-252 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Weight: 0.011oz., 0.4gFEATURES
● Advanced Trench Process Technology● High Density Cell Design for Ultra Low On-Resistance
● Rugged-Avalanche Energy Rated
● Fast Switching for High Efficiency
MAXIMUM RATINGS
and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS =10V Pulsed Drain Current (1) Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current (1) (1) (2) C = 25°C unless otherwise noted) Symbol VDS VGS TC = 25°C TC = 100°C ID IDM TC = 25°C PD EAS IAR EAR TJ, Tstg RθJC (3) Limit 60 Unit V V ± 20 42 26 100 62.5 210 21 11 – 55 to 150 2 40 A W mJ A mJ °C °C/W Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance RθJA Notes: (1) Re...
