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GFD25N03 Datasheet N-Channel Enhancement Mode MOSFET

Manufacturer: General Semiconductor (now Vishay)

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Overview

GFD25N03 N-Channel Enhancement-Mode MOSFET t H c u C rod EN ET P R T ENF New ® VDS 30V RDS(ON) 16.5mΩ ID 38A D G TO-252 (DPAK) G 0.265 (6.73) 0.255 (6.48) 0.214 (5.44) 0.206 (5.23) 0.094 (2.39) 0.087 (2.21) 0.023 (0.58) 0.018 (0.46) 0.050 (1.27) 0.035 (0.89) S 0.190 (4.826) www.DataSheet4U.com D 0.170 (4.32) min.

0.245 (6.22) 0.235 (5.97) 0.410 (10.41) 0.380 (9.65) 0.197 (5.00) 0.177 (4.49) 0.165 (4.191) G S 0.060 (1.52) 0.045 (1.14) 0.100 (2.54) 0.035 (0.89) 0.028 (0.71) 0.204 (5.18) 0.156 (3.96) 0.118 (3.0) 0.040 (1.02) 0.025 (0.64) 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) 0.020 (0.51) min.

0.009 (0.23) 0.001 (0.03) Dimensions in inches and (millimeters) 0.243 (6.172) 0.063 (1.6) Mounting Pad Layout Mechanical Data Case: JEDEC TO-252 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Weight: 0.011oz., 0.

Key Features

  • Advanced Trench Process Technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Specially Designed for Low Voltage DC/DC Converters.
  • Fast Switching for High Efficiency.
  • Low Gate Charge Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ = 150°C Pulsed Drain Current Power Dissipation TJ = 150°C (1) C = 25°C unless otherwise noted) Symbol VDS VGS TC = 25°C TC = 70°C.

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