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GFD25N03 - N-Channel Enhancement Mode MOSFET

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General Semiconductor

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GFD25N03 N-Channel Enhancement Mode MOSFET by General Semiconductor - Datasheet Preview — Datasheet preview – GFD25N03

Datasheet Details

Part number	GFD25N03
Manufacturer	General Semiconductor
File Size	116.08 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	GFD25N03 Datasheet
Additional preview pages of the GFD25N03 datasheet.

Product details

Features

Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Specially Designed for Low Voltage DC/DC Converters.
Fast Switching for High Efficiency.
Low Gate Charge Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ = 150°C Pulsed Drain Current Power Dissipation TJ = 150°C (1) C = 25°C unless otherwise noted) Symbol VDS VGS TC = 25°C TC = 70°C.

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Published: Jul 28, 2008 |