Datasheet4U Logo Datasheet4U.com

GFD25N03 - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

  • Advanced Trench Process Technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Specially Designed for Low Voltage DC/DC Converters.
  • Fast Switching for High Efficiency.
  • Low Gate Charge Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ = 150°C Pulsed Drain Current Power Dissipation TJ = 150°C (1) C = 25°C unless otherwise noted) Symbol VDS VGS TC = 25°C TC = 70°C.

📥 Download Datasheet

Datasheet preview – GFD25N03

Datasheet Details

Part number GFD25N03
Manufacturer General Semiconductor
File Size 116.08 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet GFD25N03 Datasheet
Additional preview pages of the GFD25N03 datasheet.

📁 Similar Datasheet

Other Datasheets by General Semiconductor
  • GFD2206 - N-Channel Enhancement Mode MOSFET
  • GFD30N03 - N-Channel Enhancement Mode MOSFET
  • GFD50N03 - N-Channel Enhancement Mode MOSFET
  • GFD50N03A - N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
GFD25N03 N-Channel Enhancement-Mode MOSFET t H c u C rod EN ET P R T ENF New ® VDS 30V RDS(ON) 16.5mΩ ID 38A D G TO-252 (DPAK) G 0.265 (6.73) 0.255 (6.48) 0.214 (5.44) 0.206 (5.23) 0.094 (2.39) 0.087 (2.21) 0.023 (0.58) 0.018 (0.46) 0.050 (1.27) 0.035 (0.89) S 0.190 (4.826) www.DataSheet4U.com D 0.170 (4.32) min. 0.245 (6.22) 0.235 (5.97) 0.410 (10.41) 0.380 (9.65) 0.197 (5.00) 0.177 (4.49) 0.165 (4.191) G S 0.060 (1.52) 0.045 (1.14) 0.100 (2.54) 0.035 (0.89) 0.028 (0.71) 0.204 (5.18) 0.156 (3.96) 0.118 (3.0) 0.040 (1.02) 0.025 (0.64) 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) 0.020 (0.51) min. 0.009 (0.23) 0.001 (0.03) Dimensions in inches and (millimeters) 0.243 (6.172) 0.063 (1.
Published: |