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GFD30N03 Datasheet N-Channel Enhancement Mode MOSFET

Manufacturer: General Semiconductor (now Vishay)

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Overview

GFD30N03 New Product Vishay Semiconductor VDS 30V RDS(ON) 15mΩ ID 43A N-Channel Enhancement-Mode MOSFET H C N ET TRE F N TO-252 (DPAK) E G ® 0.265 (6.73) 0.255 (6.48) 0.214 (5.44) 0.206 (5.23) 0.050 (1.27) 0.035 (0.89) 0.094 (2.39) 0.087 (2.21) 0.023 (0.58) 0.018 (0.46) D G S 0.190 (4.826) www.DataSheet4U.com D 0.170 (4.32) min.

0.245 (6.22) 0.235 (5.97) 0.410 (10.41) 0.380 (9.65) 0.197 (5.00) 0.177 (4.49) 0.165 (4.191) G S 0.060 (1.52) 0.045 (1.14) 0.100 (2.54) 0.035 (0.89) 0.028 (0.71) 0.204 (5.18) 0.156 (3.96) 0.118 (3.0) 0.040 (1.02) 0.025 (0.64) 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) 0.020 (0.51) min.

0.009 (0.23) 0.001 (0.03) Dimensions in inches and (millimeters) 0.243 (6.172) 0.063 (1.6) Mounting Pad Layout Mechanical Data Case: JEDEC TO-252 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Weight: 0.011oz., 0.

Key Features

  • Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Low Voltage DC/DC Converters Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (1) C = 25°C unless otherwise noted) Symbol VDS VGS ID IDM TC = 25°C TC = 100°C PD TJ, Tstg RθJC (2) Limit 30 ± 20 Unit V 43 120 44.5.

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