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GFD30N03 - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

  • Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Low Voltage DC/DC Converters Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (1) C = 25°C unless otherwise noted) Symbol VDS VGS ID IDM TC = 25°C TC = 100°C PD TJ, Tstg RθJC (2) Limit 30 ± 20 Unit V 43 120 44.5.

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Datasheet Details

Part number GFD30N03
Manufacturer General Semiconductor
File Size 118.46 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet GFD30N03 Datasheet
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GFD30N03 New Product Vishay Semiconductor VDS 30V RDS(ON) 15mΩ ID 43A N-Channel Enhancement-Mode MOSFET H C N ET TRE F N TO-252 (DPAK) E G ® 0.265 (6.73) 0.255 (6.48) 0.214 (5.44) 0.206 (5.23) 0.050 (1.27) 0.035 (0.89) 0.094 (2.39) 0.087 (2.21) 0.023 (0.58) 0.018 (0.46) D G S 0.190 (4.826) www.DataSheet4U.com D 0.170 (4.32) min. 0.245 (6.22) 0.235 (5.97) 0.410 (10.41) 0.380 (9.65) 0.197 (5.00) 0.177 (4.49) 0.165 (4.191) G S 0.060 (1.52) 0.045 (1.14) 0.100 (2.54) 0.035 (0.89) 0.028 (0.71) 0.204 (5.18) 0.156 (3.96) 0.118 (3.0) 0.040 (1.02) 0.025 (0.64) 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) 0.020 (0.51) min. 0.009 (0.23) 0.001 (0.03) Dimensions in inches and (millimeters) 0.243 (6.172) 0.063 (1.
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