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GFD50N03A - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

  • Advanced Trench Process Technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Specially Designed for Low Voltage DC/DC Converters.
  • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 70°C Symbol VDS VGS ID IDM PD TJ, Tstg RθJC (2) C = 25°C unless otherwise noted) Limit 30 ± 2.

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Datasheet preview – GFD50N03A

Datasheet Details

Part number GFD50N03A
Manufacturer General Semiconductor
File Size 175.04 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet GFD50N03A Datasheet
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Full PDF Text Transcription

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GFD50N03A N-Channel Enhancement-Mode MOSFET H C N T E TRE ENF VDS 30V RDS(ON) 7mΩ ID 78A D ® G TO-252 (DPAK) 0.265 (6.73) 0.255 (6.48) 0.214 (5.44) 0.206 (5.23) 0.094 (2.39) 0.087 (2.21) 0.023 (0.58) 0.018 (0.46) 0.050 (1.27) 0.035 (0.89) t c u rod P New G S 0.190 (4.826) www.DataSheet4U.com D 0.170 (4.32) min. 0.245 (6.22) 0.235 (5.97) 0.410 (10.41) 0.380 (9.65) 0.197 (5.00) 0.177 (4.49) 0.165 (4.191) G S 0.060 (1.52) 0.045 (1.14) 0.100 (2.54) 0.035 (0.89) 0.028 (0.71) 0.204 (5.18) 0.156 (3.96) 0.118 (3.0) 0.040 (1.02) 0.025 (0.64) 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) 0.020 (0.51) min. 0.009 (0.23) 0.001 (0.03) Dimensions in inches and (millimeters) 0.243 (6.172) 0.063 (1.
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