GFD30N03 Key Features
- Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Low Volta
- 12.5 17.5 35
- 3.0 ±100 1
- V V nA µA A mΩ S
- 16 34 5.7 4.7 10 9 47 13 1850 315 150
- 20 18 75 26
- pF ns nC
- Part: GFD30N03
- Manufacturer: General Semiconductor
- Size: 118.46 KB
Related General Semiconductor Datasheets
| Part Number | Description |
|---|---|
| GFD2206 | N-Channel Enhancement Mode MOSFET |
| GFD25N03 | N-Channel Enhancement Mode MOSFET |
| GFD50N03 | N-Channel Enhancement Mode MOSFET |
| GFD50N03A | N-Channel Enhancement Mode MOSFET |
GFD30N03 Description
0.009 (0.23) 0.001 (0.03) Dimensions in inches and (millimeters) 0.243 (6.172) 0.063 (1.6) Mounting Pad Layout Case: JEDEC TO-252 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed:.