GSM7002K Datasheet | Globaltech

60V N-Channel Enhancement Mode MOSFET Product Description GSM7002K, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Packages & Pin Assignments GSM7002KJZF (SOT-23) Features - 60V/0.5A , RDS(ON)=2.4Ω@VGS=10V - 60V/0.3A , RDS(ON)=3.0Ω@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - ESD Protection (2KV) Diode design-in - SOT-23 package design Applications - Drivers : Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. - High saturation current capability. Direct Logic-Level Interface: TTL/CMOS - Battery Operated Systems - Solid-State Relays Pin Description...