GSM7002T Description
The GSM7002T is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 640mA DC and can deliver pulsed currents up to 950mA.
GSM7002T Key Features
- 60V/0.50A,RDS(ON)=2.0Ω@VGS=10V
- 60V/0.20A,RDS(ON)=4.0Ω@VGS=4.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- SOT-363 package design