GSMDD6966A Datasheet, Globaltech

* 60V, 55A, RDS(ON)=8.2mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* TO-252-2L package design Applications
* .

Features
* 60V, 55A, RDS(ON)=8.2mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* Green Device.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.