GSMDD6911 mosfet equivalent, p-channel mosfet.
* -60V, -7A, RDS(ON)=180mΩ@VGS=-10V
* Improved dv/dt capability
* Fast switching
* 100% EAS guaranteed
* Green Device Available
* TO-252-2L packag.
Features
* -60V, -7A, RDS(ON)=180mΩ@VGS=-10V
* Improved dv/dt capability
* Fast switching
* 100% EAS g.
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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