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GSMDS0966 Datasheet - Globaltech

GSMDS0966 N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDS0966 Features

* 100V, 10A, RDS(ON)=18mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* SOP-8 package design Applications

* Networking

* Load Switch

* LED applications Packages & Pin Assi

GSMDS0966-Globaltech.pdf