GPT10N50A - POWER FIELD EFFECT TRANSISTOR

Datasheet Details

Part number	GPT10N50A
Manufacturer	Greatpower
File Size	1.17 MB
Description	POWER FIELD EFFECT TRANSISTOR
Datasheet	GPT10N50A-Greatpower.pdf

This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offer.

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Published: Nov 8, 2017 |