Part number:
GPT10N50AD
Manufacturer:
Greatpower
File Size:
1.17 MB
Description:
Power field effect transistor.
* This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFE
GPT10N50AD Datasheet (1.17 MB)
GPT10N50AD
Greatpower
1.17 MB
Power field effect transistor.
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