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HM2314B - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

The HM2314B by H&M Semiconductor is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

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HM2314B N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Official preview page of the HM2314B N-Channel Enhancement Mode Power MOSFET datasheet (H&M Semiconductor).

Datasheet Details

Part number	HM2314B
Manufacturer	H&M Semiconductor
File Size	474.68 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2314B-HMSemiconductor.pdf
Additional preview pages of the HM2314B datasheet.

HM2314B Product details

Description

The HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D G S Schematic diagram 2314 Marking and pin assignment.

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Published: Nov 27, 2018 |