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H&M Semiconductor

HM25P03K Datasheet Preview

HM25P03K Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM25P03K uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V.
GENERAL FEATURES
VDS = -30V,ID = -25A
RDS(ON) < 35m@ VGS=-4.5V
RDS(ON) < 20m@ VGS=-10V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
Battery Switch
Load switch
Power management
HM25P03K
D
G
S
Schematic diagram
HM25P03K
Marking and pin assignment
TO-252-2L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
HM25P03K
HM25P03K
TO-252-2L
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TST G
Limit
-30
±20
-25
-75
50
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
40
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
Page 1
Min Typ Max Unit
-30 -33
-
V
v1.0




H&M Semiconductor

HM25P03K Datasheet Preview

HM25P03K Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
VDS=-30V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=-250μA
VGS=-10V, ID=-10A
VGS=-4.5V, ID=-7.0A
VDS=-15V,ID=-9.1A
VDS=-15V,VGS=0V,
F=1.0MHz
VDD=-15V, ID=-1A,
VGS=-10V,RGEN=6
VDS=-15V,ID=-9.1A
VGS=-10V
VGS=0V,IS=-2.1A
HM25P03K
-
-
-1
μA
-
- ±100 nA
-1 -1.5 -3
V
-
15
20
m
-
21
35
m
10 -
-
S
- 1600 -
PF
- 350
-
PF
- 300
-
PF
-
10
-
nS
-
15
-
nS
- 110
-
nS
70
-
nS
-
30
-
nC
- 5.5
-
nC
-
8
-
nC
-
-
-1.2
V
Shenzhen H&M Semiconductor Co.Ltd
http//www.hmsemi.com
Page 2
v1.0


Part Number HM25P03K
Description P-Channel Enhancement Mode Power MOSFET
Maker H&M Semiconductor
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