The HM3N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
| Part number | HM3N10PR |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 457.95 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 HM3N10PR Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| HM3-6514-9 | 1024 x 4 CMOS RAM | Intersil Corporation |
| HM3-6514B-9 | 1024 x 4 CMOS RAM | Intersil Corporation |
| HM3-6514S-9 | 1024 x 4 CMOS RAM | Intersil Corporation |
| HM3-65764 | High Speed CMOS SRAM | Matra Design Semiconductor |
| HM3-65787 | High Speed CMOS SRAM | Matra Design Semiconductor |
| Part Number | Description |
|---|---|
| HM3N10 | N-Channel Enhancement Mode Power MOSFET |
| HM3N10AMR | N-Channel Enhancement Mode Power MOSFET |
| HM3N10MR | N-Channel Enhancement Mode Power MOSFET |
| HM3N150A | silicon N-channel Enhanced VDMOSFET |
| HM3N20PR | 200V N-Channel Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
