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HM3N10AMR Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

General Description

The HM3N10AMR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Overview

HM3N10AMR N-Channel Enhancement Mode Power MOSFET.

Key Features

  • VDS = 100V,ID = 3A RDS(ON).