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HM3N30R Datasheet Silicon N-Channel Power MOSFET

Manufacturer: H&M Semiconductor

General Description

: VDSS 300 V HM3N30R, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.6 Ω performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is SOT-223, which accords with the RoHS standard.

Overview

HM3N30R Silicon N-Channel Power MOSFET General.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤3.2Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test.