HM3N40PR - Silicon N-Channel Power MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM3N40PR
Manufacturer	H&M Semiconductor
File Size	561.21 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HM3N40PR Datasheet
Additional preview pages of the HM3N40PR datasheet.

Product details

Description

VDSS 400 V HM3N40PR, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.8 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is SOT-89-3L, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤3.4Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test.

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Published: Feb 11, 2019 |