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HM3N20PR - 200V N-Channel Enhancement Mode MOSFET

Product Overview

H&M Semiconductor

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HM3N20PR 200V N-Channel Enhancement Mode MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM3N20PR

Datasheet Details

Part number	HM3N20PR
Manufacturer	H&M Semiconductor
File Size	1.24 MB
Description	200V N-Channel Enhancement Mode MOSFET
Datasheet	HM3N20PR Datasheet
Additional preview pages of the HM3N20PR datasheet.

Product details

Description

The HM3N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 200V,ID =3A RDS(ON) < 1300mΩ @ VGS=10V (Typ:1000mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation.

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Published: Jun 30, 2025 |