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HM3N20PR Datasheet 200V N-Channel Enhancement Mode MOSFET

Manufacturer: H&M Semiconductor

General Description

The HM3N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Overview

HM3N20PR 200V N-Channel Enhancement Mode MOSFET.

Key Features

  • VDS = 200V,ID =3A RDS(ON) < 1300mΩ @ VGS=10V (Typ:1000mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation.