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HM3N10 - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM3N10 N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM3N10

Datasheet Details

Part number	HM3N10
Manufacturer	H&M Semiconductor
File Size	400.03 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM3N10 Datasheet
Additional preview pages of the HM3N10 datasheet.

Product details

Description

The HM1 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID = 2A RDS(ON) 1mΩ 7S@ VGS=10V RDS(ON) 1mΩ 7S@ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.

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Published: Jun 30, 2025 |