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HM3N10 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

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Datasheet Details

Part number	HM3N10
Manufacturer	H&M Semiconductor
File Size	400.03 KB
Description	N-Channel Enhancement Mode Power MOSFET
Download	HM3N10 Download (PDF)

General Description

The HM1 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

D G General

Overview

HM1 N-Channel Enhancement Mode Power MOSFET.

Key Features

VDS = 100V,ID = 2A RDS(ON) 1mΩ 7S@ VGS=10V RDS(ON) 1mΩ 7S@ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.

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